Manufacturer:
NTE Electronics, Inc
Description:
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
Detailed Description:
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-PDIP
Product Status::
6819 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Collector (Ic) (Max) | 600mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Frequency - Transition | - |
Mfr | NTE Electronics, Inc |
Mounting Type | Through Hole |
Operating Temperature | -20°C ~ 85°C (TA) |
Package | Bag |
Package / Case | 18-DIP (0.300", 7.62mm) |
Power - Max | 1W |
Product Status | Active |
Series | - |
Supplier Device Package | 18-PDIP |
Transistor Type | 8 NPN Darlington |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 350mA, 500A |
Voltage - Collector Emitter Breakdown (Max) | 50V |