Manufacturer:
NTE Electronics, Inc
Description:
TRANS NPN 80V 1A TO237
Detailed Description:
Bipolar (BJT) Transistor NPN 80 V 1 A 50MHz 850 mW Through Hole TO-237
Product Status::
4489 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Collector (Ic) (Max) | 1 A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 350mA, 2V |
Frequency - Transition | 50MHz |
Mfr | NTE Electronics, Inc |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bag |
Package / Case | TO-237AA |
Power - Max | 850 mW |
Product Status | Active |
Series | - |
Supplier Device Package | TO-237 |
Transistor Type | NPN |
Vce Saturation (Max) @ Ib, Ic | - |
Voltage - Collector Emitter Breakdown (Max) | 80 V |