Manufacturer:
Microsemi Corporation
Description:
MOSFET P-CH 100V 6.5A TO39
Detailed Description:
P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Product Status::
4448 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
Mfr | Microsemi Corporation |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | TO-205AF Metal Can |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
Series | Military, MIL-PRF-19500/564 |
Supplier Device Package | TO-39 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |