Manufacturer:
Harris Corporation
Description:
0.8A 200V 0.800 OHM N-CHANNEL
Detailed Description:
N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Product Status::
1166 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IRFD220 |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
Mfr | Harris Corporation |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | 4-DIP (0.300", 7.62mm) |
Power Dissipation (Max) | 1W (Ta) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 800mOhm @ 480mA, 10V |
Series | - |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |