Manufacturer:
Harris Corporation
Description:
1A, 100V, 0.600 OHM, N-CHANNEL
Detailed Description:
N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Product Status::
1506 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IRFD110 |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drain to Source Voltage (Vdss) | 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
Mfr | Harris Corporation |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Bulk |
Package / Case | 4-DIP (0.300", 7.62mm) |
Power Dissipation (Max) | 1.3W (Ta) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
Series | - |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |