Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 18A TO220AB
Detailed Description:
N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-220AB
Product Status::
9507 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IRF640 |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 150W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
Series | HEXFET® |
Supplier Device Package | TO-220AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |