Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 150V 13A TO262
Detailed Description:
P-Channel 150 V 13A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262
Product Status::
17508 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drain to Source Voltage (Vdss) | 150 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
Series | HEXFET® |
Supplier Device Package | TO-262 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |