Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 38A TO247-3
Detailed Description:
N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO247-3-1
Product Status::
7496 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPW65R099 |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 278W (Tc) |
Product Status | Not For New Designs |
Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
Series | CoolMOS™ |
Supplier Device Package | PG-TO247-3-1 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |