Manufacturer:
Infineon Technologies
Description:
IPS80R1K4 - 800V COOLMOS N-CHANN
Detailed Description:
N-Channel 800 V 4A (Tj) 32W (Tc) Through Hole PG-TO251
Product Status::
8454 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 4A (Tj) |
Drain to Source Voltage (Vdss) | 800 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | TO-251-3 Stub Leads, IPak |
Power Dissipation (Max) | 32W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
Series | CoolMOS P7™ |
Supplier Device Package | PG-TO251 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 3.5V @ 700µA |