Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 14A TO220-3
Detailed Description:
N-Channel 650 V 14A (Tc) 77W (Tc) Through Hole PG-TO220-3
Product Status::
8230 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPP65R190 |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1291 pF @ 400 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -40°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 77W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 190mOhm @ 6.4A, 10V |
Series | Automotive, AEC-Q101, CoolMOS™ |
Supplier Device Package | PG-TO220-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4.5V @ 320µA |