Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 13.8A TO262-3
Detailed Description:
N-Channel 600 V 13.8A (Tc) 104W (Tc) Through Hole PG-TO262-3-1
Product Status::
1296 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | CoolMOS™ C6 |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 430µA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |