Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 21A TO262-3
Detailed Description:
N-Channel 650 V 21A (Tc) 192W (Tc) Through Hole PG-TO262-3
Product Status::
16222 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPI60R165 |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Power Dissipation (Max) | 192W (Tc) |
Product Status | Not For New Designs |
Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
Series | CoolMOS™ |
Supplier Device Package | PG-TO262-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 3.5V @ 790µA |