Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 80A TO263-3
Detailed Description:
N-Channel 55 V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
Product Status::
16196 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPB80N |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drain to Source Voltage (Vdss) | 55 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 210W (Tc) |
Product Status | Discontinued at Digi-Key |
Rds On (Max) @ Id, Vgs | 6.7mOhm @ 60A, 10V |
Series | OptiMOS™ |
Supplier Device Package | PG-TO263-3-2 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 2V @ 150µA |