Manufacturer:
Infineon Technologies
Description:
HIGH POWER_NEW
Detailed Description:
N-Channel 650 V 22A (Tc) 114W (Tc) Surface Mount PG-TO263-3
Product Status::
1921 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPB65R |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1942 pF @ 400 V |
Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 114W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 110mOhm @ 9.7A, 10V |
Series | CoolMOS™ CFD7 |
Supplier Device Package | PG-TO263-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4.5V @ 480µA |