Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 8.7A TO220
Detailed Description:
N-Channel 650 V 8.7A (Tc) 31.2W (Tc) Through Hole PG-TO220-3-111
Product Status::
16710 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPA65R420 |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 Full Pack |
Power Dissipation (Max) | 31.2W (Tc) |
Product Status | Not For New Designs |
Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
Series | CoolMOS™ |
Supplier Device Package | PG-TO220-3-111 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4.5V @ 340µA |