Manufacturer:
Fairchild Semiconductor
Description:
INSULATED GATE BIPOLAR TRANSISTO
Detailed Description:
IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-3PN
Product Status::
783 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Collector (Ic) (Max) | 80 A |
Current - Collector Pulsed (Icm) | 120 A |
Gate Charge | 68 nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Mfr | Fairchild Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Bulk |
Package / Case | TO-3P-3, SC-65-3 |
Power - Max | 268 W |
Product Status | Active |
Reverse Recovery Time (trr) | 101 ns |
Series | - |
Supplier Device Package | TO-3PN |
Switching Energy | 1.22mJ (on), 440µJ (off) |
Td (on/off) @ 25°C | 18ns/64ns |
Test Condition | 400V, 40A, 6Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 1.81V @ 15V, 40A |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
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