Manufacturer:
Fairchild Semiconductor
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 650 V 15A (Tc) 38.5W (Tc) Through Hole TO-220F-3
Product Status::
7020 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3095 pF @ 25 V |
Mfr | Fairchild Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | TO-220-3 Full Pack |
Power Dissipation (Max) | 38.5W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 440mOhm @ 7.5A, 10V |
Series | UniFET™ |
Supplier Device Package | TO-220F-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V |
Vgs(th) (Max) @ Id | 5V @ 250µA |