Manufacturer:
Diodes Incorporated
Description:
MOSFET P-CH 12V 9.1A 6UDFN
Detailed Description:
P-Channel 12 V 9.1A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
Product Status::
3678 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 9.1A (Ta) |
Drain to Source Voltage (Vdss) | 12 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 42.6 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 2953 pF @ 4 V |
Mfr | Diodes Incorporated |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | 6-PowerUDFN |
Power Dissipation (Max) | 660mW (Ta) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 16mOhm @ 8.2A, 4.5V |
Series | - |
Supplier Device Package | U-DFN2020-6 (Type E) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±8V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |