Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 25V 1.3A 3DFN
Detailed Description:
N-Channel 25 V 1.3A (Ta) 540mW (Ta) Surface Mount X1-DFN1006-3
Product Status::
19971 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | DMN2600 |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drain to Source Voltage (Vdss) | 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 0.85 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 70.13 pF @ 15 V |
Mfr | Diodes Incorporated |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | 3-UFDFN |
Power Dissipation (Max) | 540mW (Ta) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 350mOhm @ 200mA, 4.5V |
Series | - |
Supplier Device Package | X1-DFN1006-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±8V |
Vgs(th) (Max) @ Id | 1V @ 250µA |