Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 12V 4.8A U-WLB1010-4
Detailed Description:
N-Channel 12 V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4
Product Status::
16872 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | DMN1032 |
Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
Drain to Source Voltage (Vdss) | 12 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 6 V |
Mfr | Diodes Incorporated |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | 4-UFBGA, WLBGA |
Power Dissipation (Max) | 900mW (Ta) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 26mOhm @ 1A, 4.5V |
Series | - |
Supplier Device Package | U-WLB1010-4 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±8V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |