Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 21A TO220-3
Detailed Description:
N-Channel 200 V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3
Product Status::
9459 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | SIPMOS® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |