Manufacturer:
EPC
Description:
GAN TRANS ASYMMETRICAL HALF BRID
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Product Status::
33910 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
Drain to Source Voltage (Vdss) | 80V |
FET Feature | GaNFET (Gallium Nitride) |
FET Type | 2 N-Channel (Half Bridge) |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V, 10nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V, 1100pF @ 40V |
Mfr | EPC |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | Die |
Power - Max | - |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
Series | eGaN® |
Supplier Device Package | Die |
Vgs(th) (Max) @ Id | 2.5V @ 2.5mA, 2.5V @ 10mA |