IPB180N06S4H1ATMA2 Datasheet, PDF
- Manufacturer model: IPB180N06S4H1ATMA2
- Function description: Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
- Manufacturer: Infineon Technologies AG
- Data sheet: -
- Category: Power Field-Effect Transistors
IPB180N06S4H1ATMA2 Alternate Parts
- Description Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
- Part No. IPB180N06S4H1ATMA2
- Manufacturer Infineon Technologies AG
IPB180N06S4H1ATMA2 Suppliers
No Date