Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 40V 80A TO262-3
Detailed Description:
P-Channel 40 V 80A (Tc) 88W (Tc) Through Hole PG-TO262-3-1
Product Status::
30156 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IPI80P |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drain to Source Voltage (Vdss) | 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6085 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Power Dissipation (Max) | 88W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 7.7mOhm @ 80A, 10V |
Series | Automotive, AEC-Q101, OptiMOS™ |
Supplier Device Package | PG-TO262-3-1 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 150µA |