Manufacturer:
Goford Semiconductor
Description:
N60V, 170A,RD<2.5M@10V,VTH1.2V~2
Detailed Description:
N-Channel 60 V 170A (Tc) 215W (Tc) Through Hole TO-220
Product Status::
9297 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 4954 pF @ 30 V |
Mfr | Goford Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 215W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
Series | - |
Supplier Device Package | TO-220 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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