Manufacturer:
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description:
N-CHANNEL SILICON CARBIDE POWER
Detailed Description:
N-Channel 1200 V 36A (Tc) 192W (Tc) Through Hole TO-247-3
Product Status::
847 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id | 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 1475 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 192W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |