Manufacturer:
Goford Semiconductor
Description:
N-CH, 60V,170A, RD(MAX)<3.5M@10V
Detailed Description:
N-Channel 60 V 170A (Tc) 215W (Tc) Through Hole TO-220
Product Status::
3415 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5064 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 215W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |