Manufacturer:
PN Junction Semiconductor
Description:
SICFET N-CH 650V 97A TO247-4
Detailed Description:
N-Channel 650 V 97A 326W Through Hole TO-247-4L
Product Status::
5160 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3M |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 97A |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id | 2.2V @ 50mA (Typ) |
Vgs (Max) | +20V, -8V |
FET Feature | - |
Power Dissipation (Max) | 326W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
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