Manufacturer:
PN Junction Semiconductor
Description:
DIODE SIL CARB 650V 106A TO247-3
Detailed Description:
Diode Silicon Carbide Schottky 650 V 106A TO-247-3
Product Status::
5157 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | P6D |
Package | Tube |
Product Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 106A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
Operating Temperature - Junction | -55°C ~ 175°C (TJ) |