Manufacturer:
PN Junction Semiconductor
Description:
DIODE SIL CARB 1.2KV 33A TO263-2
Detailed Description:
Diode Silicon Carbide Schottky 1200 V 33A TO-263-2
Product Status::
5153 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3D |
Package | Tape & Reel (TR) |
Product Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 33A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Package / Case | TO-263-2 |
Supplier Device Package | TO-263-2 |
Operating Temperature - Junction | -55°C ~ 175°C (TJ) |