Manufacturer:
EPC Space, LLC
Description:
GAN FET HEMT200V18A COTS 4FSMD-B
Detailed Description:
N-Channel 200 V 18A (Tc) Surface Mount 4-SMD
Product Status::
6334 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
Mfr | EPC Space, LLC |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tray |
Package / Case | 4-SMD, No Lead |
Power Dissipation (Max) | - |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 26mOhm @ 18A, 5V |
Series | - |
Supplier Device Package | 4-SMD |
Technology | GaNFET (Gallium Nitride) |
Vgs (Max) | +6V, -4V |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |