Manufacturer:
SemiQ
Description:
SIC MOSFET 1200V 80M TO-247-3L
Detailed Description:
N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3
Product Status::
7127 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | GP2T080A |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
Mfr | SemiQ |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 188W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
Series | - |
Supplier Device Package | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Vgs (Max) | +25V, -10V |
Vgs(th) (Max) @ Id | 4V @ 10mA |