Manufacturer:
Global Power Technology-GPT
Description:
DIODE SIC 650V 30.5A TO220AC
Detailed Description:
Diode Silicon Carbide Schottky 650 V 30.5A Through Hole TO-220AC
Product Status::
2236 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Global Power Technology-GPT |
Series | - |
Package | Cut Tape (CT), Tape & Box (TB) |
Product Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 30.5A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 175°C |