Manufacturer:
Global Power Technology-GPT
Description:
DIODE SIL CARB 650V 11.5A TO263
Detailed Description:
Diode Silicon Carbide Schottky 650 V 11.5A Surface Mount TO-263
Product Status::
2234 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
Current - Average Rectified (Io) | 11.5A |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Diode Type | Silicon Carbide Schottky |
Mfr | Global Power Technology-GPT |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -55°C ~ 175°C |
Package | Cut Tape (CT), Tape & Box (TB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Product Status | Active |
Reverse Recovery Time (trr) | 0 ns |
Series | - |
Speed | No Recovery Time > 500mA (Io) |
Supplier Device Package | TO-263 |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |