Manufacturer:
Global Power Technology-GPT
Description:
DIODE SIC 1.2KV 24.6A TO220F
Detailed Description:
Diode Silicon Carbide Schottky 1200 V 24.6A Through Hole TO-220F
Product Status::
2232 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Capacitance @ Vr, F | 1320pF @ 0V, 1MHz |
Current - Average Rectified (Io) | 24.6A |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
Diode Type | Silicon Carbide Schottky |
Mfr | Global Power Technology-GPT |
Mounting Type | Through Hole |
Operating Temperature - Junction | -55°C ~ 175°C |
Package | Cut Tape (CT), Tape & Box (TB) |
Package / Case | TO-220-2 Full Pack |
Product Status | Active |
Reverse Recovery Time (trr) | 0 ns |
Series | - |
Speed | No Recovery Time > 500mA (Io) |
Supplier Device Package | TO-220F |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |