Manufacturer:
Global Power Technology-GPT
Description:
DIODE SIL CARBIDE 650V 53A 4DFN
Detailed Description:
Diode Silicon Carbide Schottky 650 V 53A Surface Mount 4-DFN (8x8)
Product Status::
2229 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Capacitance @ Vr, F | 645pF @ 0V, 1MHz |
Current - Average Rectified (Io) | 53A |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Diode Type | Silicon Carbide Schottky |
Mfr | Global Power Technology-GPT |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -55°C ~ 175°C |
Package | Cut Tape (CT), Tape & Box (TB) |
Package / Case | 4-PowerTSFN |
Product Status | Active |
Reverse Recovery Time (trr) | 0 ns |
Series | - |
Speed | No Recovery Time > 500mA (Io) |
Supplier Device Package | 4-DFN (8x8) |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |