Manufacturer:
Global Power Technology-GPT
Description:
DIODE SIL CARB 650V 35A TO220AC
Detailed Description:
Diode Silicon Carbide Schottky 650 V 35A Through Hole TO-220AC
Product Status::
2226 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Capacitance @ Vr, F | 690pF @ 0V, 1MHz |
Current - Average Rectified (Io) | 35A |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Diode Type | Silicon Carbide Schottky |
Mfr | Global Power Technology-GPT |
Mounting Type | Through Hole |
Operating Temperature - Junction | -55°C ~ 175°C |
Package | Cut Tape (CT), Tape & Box (TB) |
Package / Case | TO-220-2 |
Product Status | Active |
Reverse Recovery Time (trr) | 0 ns |
Series | - |
Speed | No Recovery Time > 500mA (Io) |
Supplier Device Package | TO-220AC |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |