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IGN1011L70 Datasheet, PDF

  • Manufacturer model: IGN1011L70
  • Function description: RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
  • Manufacturer: Integra Technologies Inc
  • Data sheet: -
  • Category: RF Power Field-Effect Transistors

IGN1011L70 Alternate Parts

  • Description RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
  • Part No. IGN1011L70
  • Manufacturer Integra Technologies Inc

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