IGN1011L70 Datasheet, PDF
- Manufacturer model: IGN1011L70
- Function description: RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
- Manufacturer: Integra Technologies Inc
- Data sheet: -
- Category: RF Power Field-Effect Transistors
IGN1011L70 Alternate Parts
- Description RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
- Part No. IGN1011L70
- Manufacturer Integra Technologies Inc
IGN1011L70 Suppliers
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