Manufacturer:
UnitedSiC
Description:
SICFET N-CH 1200V 18.4A TO247-4
Detailed Description:
N-Channel 1200 V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-4
Product Status::
8321 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | UF3C120150 |
Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 12V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 25.7 nC @ 12 V |
Input Capacitance (Ciss) (Max) @ Vds | 738 pF @ 100 V |
Mfr | UnitedSiC |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-247-4 |
Power Dissipation (Max) | 166.7W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
Series | - |
Supplier Device Package | TO-247-4 |
Technology | SiCFET (Cascode SiCJFET) |
Vgs (Max) | ±25V |
Vgs(th) (Max) @ Id | 5.5V @ 10mA |