Manufacturer:
Rohm Semiconductor
Description:
IGBT TRENCH FIELD 650V 8A TO262
Detailed Description:
IGBT Trench Field Stop 650 V 8 A 65 W Through Hole TO-262
Product Status::
2226 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 8 A |
Current - Collector Pulsed (Icm) | 12 A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
Power - Max | 65 W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 13.5 nC |
Td (on/off) @ 25°C | 17ns/69ns |
Test Condition | 400V, 4A, 50Ohm, 15V |
Reverse Recovery Time (trr) | 40 ns |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package | TO-262 |
Base Product Number | RGT8NS65 |